View STL21N65M5_3242707.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

may 2011 doc id 17438 rev 4 1/14 14 STL21N65M5 n-channel 650 v, 0.175 , 17 a powerflat? (8x8) hv ultra low gate charge mdmesh? v power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description the device is a n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STL21N65M5 710 v < 0.190 17 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0ower&,!4?x (6 "ottomview !-v $ ' 3 table 1. device summary order code marking package packaging STL21N65M5 21n65m5 powerflat? (8x8) hv tape and reel www.st.com
contents STL21N65M5 2/14 doc id 17438 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STL21N65M5 electrical ratings doc id 17438 rev 4 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 650 v v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case. drain current (continuous) at t c = 25 c 17 a i d (1) drain current (continuous) at t c = 100 c 11 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 68 a i d (3) 3. when mounted on fr-4 board of inch2, 2oz cu. drain current (continuous) at t c = 25 c 2.7 a i d (3) drain current (continuous) at t c = 100 c 1.7 a i dm (2),(3) drain current (pulsed) 10.8 a p tot (3) total dissipation at t c = 25 c (steady state) 3 w p tot (1) total dissipation at t c = 25 c (steady state) 125 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj dv/dt (4) 4. i sd 17 a, di/dt 400 a/s, v peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-amb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-amb max 45 c/w
electrical characteristics STL21N65M5 4/14 doc id 17438 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 8.5 a 0.175 0.190 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1950 46 3 - pf pf pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -133-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -44-pf r g intrinsic gate resistance f = 1 mhz open drain - 2.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 8.5 a, v gs = 10 v (see figure 16 ) - 44 12 17 - nc nc nc
STL21N65M5 electrical characteristics doc id 17438 rev 4 5/14 table 6. switching times symbol parameter test conditions min. typ. max unit t d(off) t r t c t f turn-off delay time rise time cross time fall time v dd = 400 v, i d = 11 a, r g = 4.7 , v gs = 10 v (see figure 17 ), (see figure 20 ) - 37 10 24 12 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 294 4 28 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 340 5 29 ns c a
electrical characteristics STL21N65M5 6/14 doc id 17438 rev 4 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0706 8 v2 10 -5 10 -4 10 - 3 10 -2 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 zth powerflat 8 x 8 hv i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 25 20 25 5v 6v 7v v g s =10v 3 0 3 5 3 0 am0549 3 v1 i d 20 15 5 0 0 4 v g s (v) 8 (a) 2 6 10 25 3 0 v d s =15v 10 3 5 am05494v1 v g s 6 4 2 0 0 10 q g (nc) (v) 8 3 0 50 10 v dd =520v i d = 8 .5a 12 3 00 200 100 0 400 v g s 500 20 40 am05496v1 r d s (on) 0.14 0.12 0.10 0.0 8 0 8 i d (a) ( ) 4 14 0.16 0.1 8 2610 12 16 v g s = 10 v am05495v1
STL21N65M5 electrical characteristics doc id 17438 rev 4 7/14 figure 8. output capacitance stored energy figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 6 500 600 7 8 9 am0549 8 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am05497v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 i d =250 a am05500v1 r d s (on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1. 3 1.9 2.1 125 i d = 8 .5 a v g s = 10 v am05501v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =150c t j =25c am05502v1 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 1.05 1.07 i d = 1 ma am05499v1
electrical characteristics STL21N65M5 8/14 doc id 17438 rev 4 figure 14. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode e 60 40 20 0 0 20 r g ( ) ( j) 10 3 0 8 0 100 120 40 i d =11a v dd =400v v g s =10v eon eoff 140 160 am05541v1
STL21N65M5 test circuits doc id 17438 rev 4 9/14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive wavefor m figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data STL21N65M5 10/14 doc id 17438 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STL21N65M5 package mechanical data doc id 17438 rev 4 11/14 table 8. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.02 0.05 b 0.95 1.00 1.05 c0.10 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 figure 21. powerflat? 8x8 hv drawing mechanical data index area top view plane seating 0.08 c bottom view side view pin#1 id d e e b a e2 d2 l 0.40 a1 am05542v1
package mechanical data STL21N65M5 12/14 doc id 17438 rev 4 figure 22. powerflat? 8x8 hv recommended footprint 7. 3 0 4.40 2.00 0.60 1.05 am0554 3 v1
STL21N65M5 revision history doc id 17438 rev 4 13/14 5 revision history table 9. document revision history date revision changes 28-apr-2010 1 first release. 14-jun-2010 2 r ds(on) typical value has been corrected. 14-mar-2011 3 figure 2: safe operating area , figure 3: thermal impedance and figure 7: static drain-source on resistance have been updated. 18-may-2011 4 r ds(on) limits in table 4 have been updated.
STL21N65M5 14/14 doc id 17438 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STL21N65M5

	To Download STL21N65M5 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .